Ultrahigh-high Quality single crystals of silicon carbide by alternate repetition of expansion perpendicular to c-axis The impact of drilling velocity to the evolution system of subsurface defects in single crystal 3C-SiC in molecular dynamics Dongling Yu The paper also addresses the challenges confronted in obtaining superior-top quality SiC wafers and https://x.com/Anumhsite/status/1809240404564578652